The most recent current transducer from Danisense has been made available; it is primarily designed for battery testing, evaluation systems, and test benches for electric vehicles (EVs). Power cables with large power connections can be connected to EV test benches simply and quickly thanks to the DN1000ID current transducer's large aperture of 41.2 mm.
The large aperture is a significant advantage because test bench operators frequently encounter the issue of power connectors fitted to power cables that are larger than the cable diameter, making it difficult to fit them in the current transducer's aperture and frequently requiring additional work to resolve this problem
The new DN1000ID device provides an excellent balance between the 1000 ARMS nominal primary AC or DC current and aperture size thanks to strong measuring performances in terms of precision and phase shift. The new current transducer provides isolated, non-intrusive measurement of DC and AC currents between -1500 A and 1500 A.
Like other Danisense products, the DN1000ID current transducers profit from the high stability closed loop fluxgate technology. Additional technological features include a small aluminum housing, 1 ppm linearity, and a 5 ppm offset. Additional target applications for the product include power monitoring and analysis, MPS for particle accelerators, gradient amplifiers for MRI equipment, precision drives, and current calibration goals.
Two new 40V N-channel power MOSFETs made for automotive use by Toshiba Electronics Europe have been introduced and are appropriate for the design of next-generation vehicles. Both the XPQR3004PB and XPQ1R004PB devices employ the L-TOGLTM (large transistor outline gull-wing leads) packaging format.
The recently released Toshiba power MOSFETs are highly optimized for handling large currents because of their L-TOGL packages and the improved heat dissipation characteristics derived. They both have high drain current ratings (400A for the XPQR3004PB and 200A for the XPQ1R004PB), as well as industry-leading on-resistance values (0.3m for the XPQR3004PB and 1m for the XPQ1R004PB).
On these devices, there is no internal post structure (solder connection). In order to do this, a creative copper clip is used to join the source and outer leads. When compared to the TO-220SM(W) package, the use of a multi-pin structure for the source leads reduces package resistance (and related losses) by about 70%. The resulting XPQR3004PB's drain current (ID) rating is a 60% improvement over the TKR74F04PB, which is currently housed in a TO-220SM(W) package. The thick copper frame also significantly lowers the thermal impedance from the junction to the case. For the XPQR3004PB and the XPQ1R004PB, it is 0.2°C/W and 0.65°C/W, respectively. This improves reliability and lowers operating temperatures while facilitating heat dissipation.
The XPQR3004PB and XPQ1R004PB power MOSFETs are both AEC-Q101 qualified and designed for use in demanding automotive applications at temperatures up to 175°C. The solder joint reliability is increased thanks to their gull-wing leads, which lessen mounting stress and enable simple visual inspection.
The XPQR3004PB and XPQ1R004PB power MOSFETs allow for simpler designs and require fewer MOSFETs when used in high-current automotive applications like semiconductor relays or integrated starter generators (ISGs). Size, weight, and cost reduction are all aided by this.
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